A promising technology named epitaxy on nano-scale freestanding fin(ENFF) is firstly proposed for heteroepitaxy This technology can effectively release total strain energy and then can reduce the probability of generating mismatch dislocations. Based on the calculation, dislocation defects can be eliminated completely when the thickness of the Si freestanding fin is less than 10 nm for the epitaxial Ge layer. In addition, this proposed ENFF process can provide sufficient uniaxial stress for the epitaxy layer, which can be the major stressor for the SiGe or Ge channel fin field-effect transistor or nanowire at the 10 nm node and beyond. According to the results of technology computer-aided design simulation, nanowires integrated with ENFF show excellent electrical performance for uniaxial stress and band offset. The ENFF process is compatible with the state of the art mainstream technology, which has a good potential for future applications. A promising technology named epitaxy on nano-scale freestanding fin (ENFF) is first proposed for heteroepitaxy This technology can effectively release total strain energy and then can reduce the probability of generating mismatch dislocations. Based on the calculation, dislocation defects can be completely disabled when the thickness of the Si freestanding fin is less than 10 nm for the epitaxial Ge layer. In addition, this proposed ENFF process can provide sufficient uniaxial stress for the epitaxy layer, which can be the major stressor for the SiGe or Ge channel fin field- effect transistor or nanowire at the 10 nm node and beyond. The ENFF process is compatible with the state of the art mainstream technology, which has a good potential for future applications.