论文部分内容阅读
推荐一种新的高分辩率多晶硅ＴＦＴＬＣＤ的象素设计。推荐的象素单元含有双栅多晶硅和双层存贮电容。为了减小象素尺寸而不必牺牲图象的亮度，双层电容由垂直堆叠的两个并联存贮电容器构成，它的电容量是具有同样面积的普通平行板电容器的两倍。双栅ＴＦＴ在隧道的顶部和底部有两个栅，其导通电流是同体积的普通ＴＦＴ导通电流的两倍，因为隧道在断态是完全耗尽的，所以双栅ＴＦＴ的漏电流比普通ＴＦＴ要低
Recommended a new high resolution polysilicon TFTLCD pixel design. The recommended pixel cell contains double-gate polysilicon and double-layer storage capacitors. In order to reduce the pixel size without sacrificing the brightness of the image, the double layer capacitor consists of two parallel storage capacitors stacked vertically with twice the capacitance of a conventional parallel plate capacitor with the same area. Dual-gate TFTs have two gates at the top and bottom of the tunnel with twice the turn-on current of the same volume of common TFT turn-on current because the tunnel is completely depleted in off-state so that the leakage current ratio Ordinary TFT to be low