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采用RF-PECVD技术,通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料,研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验,在分析光照前后光电特性变化规律的基础上,认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定,衰退率较少;高晶化率微晶硅材料性能稳定,基本不存在光衰退;在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退,但相比高晶化率硅材料来说更适合制备高效微晶硅电池.
A series of silicon thin films with different crystallization rates were prepared by RF-PECVD, and the effect of process variation on the structure of the materials and the relationship between the photo-electrical properties and the microstructures were studied by changing the silane concentration of the reactive gas. According to the optical decay test, based on the analysis of the changes of the photoelectric characteristics before and after illumination, it is considered that the amorphous component in the material is the main reason leading to the decline of the photoelectric properties of the material.Compared with the conventional amorphous silicon Stable, and low rate of decay; high crystallinity rate microcrystalline silicon material performance is stable, there is basically no optical degradation; in the transitional region near the microcrystalline side of the silicon material is not completely without recession, but compared to high crystallization rate silicon material For more efficient preparation of microcrystalline silicon cells.