1.序言超大规模集成电路的开发日趋激烈,最小图形为1μm的1Mbit DRAM(动态随机存取存储器)才投入批量生产,0.8μm的4MbitDRAM 样品又已上市,现正处在争先恐后研制0.5～0.6μm的16Mbit DRAM 的鼎盛时期。这样稳固的发展,只有在光缩小曝光技术最近几年有了显著进展之后才成为可能。光刻术中,首先制作标线板,板上有用电子束以5倍大小刻划的超大规模集成电路图形。然后,采用大孔径投影透镜把电路图形缩成1/5,无畸变地把15mm 以上的方形区域转 1. INTRODUCTION The development of very large scale integrated circuits is becoming more and more fierce. 1Mbit DRAM (Dynamic Random Access Memory) with a minimum size of 1μm is put into mass production. The 0.8μm 4MbitDRAM sample is on the market again. The heyday of 16Mbit DRAM. Such a steady development is only possible after significant progress has been made in optical-miniature exposure technology in recent years. Lithography, the first production of reticle, the board useful electron beam scored 5 times the size of VLSI graphics. Then, the use of large aperture projection lens to reduce the circuit graphics 1/5, without distortion of more than 15mm square area turn