InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique.The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy.The currentvoltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77K are discussed.The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7μm to 3.5μm,which is caused by the reduced effective photons near p-n junction.The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5μm under AM1.5 at 77K is obtained.The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.