本文提出一种硅光敏晶体管光谱响应的合理结构设计,即深浅基区结构设计,浅基区保证对吸收系数大的短波长光的响应,深基区可以保证三极管的性能以及击穿电压的要求.同时,选用高阻单晶材料,提供足够大的势垒宽度,可以保证对长波长光的响应.因此,这种深浅基区结构是一种较好的宽光谱响应的光敏晶体管结构. This paper presents a reasonable design of the spectral response of a silicon phototransistor, which is the design of a shallow base. The shallow base ensures the response to short wavelength light with a large absorption coefficient. The deep base can ensure the performance of the transistor and the breakdown voltage At the same time, the choice of high-resistance single-crystal materials to provide a sufficiently large barrier width, to ensure long-wavelength light response.Therefore, this dark base structure is a good wide-spectral response phototransistor structure.