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DE类功率放大器既综合了D类和E类功率放大器的优点,继承了开关型功率放大器高效率的特征,又同时避免了D类和E类功率放大器的缺陷,使其成为了人们关注和研究的热点。随着工作频率的升高,MOSFET寄生电容在DE类功率放大器并联电容的计算中无法忽略。经过理论分析得到了MOSFET寄生电容的等效电容表达式,通过使用等效电容表达式,可以获得包含MOSFET寄生电容影响的并联电容的取值,提高了DE类功率放大器设计精度,保证了DE类功率放大器在高频时的高效率。通过SPICE模型仿真和电路实验验证了分析的有效性。
The combination of the advantages of Class D and Class E power amplifiers, the inheritance of the high efficiency of switched mode power amplifiers, and the elimination of the drawbacks of Class D and Class E power amplifiers have made DE class power amplifiers a concern and research Hot spots. As the operating frequency increases, MOSFET parasitic capacitance can not be ignored in the calculation of the shunt capacitance of a class-DE power amplifier. Through the theoretical analysis, we get the equivalent capacitance expression of parasitic capacitance of MOSFET. By using the equivalent capacitance expression, we can get the value of the parallel capacitance that contains the parasitic capacitance of MOSFET, and improve the design precision of DE type power amplifier, High efficiency of the power amplifier at high frequencies. The effectiveness of the analysis is verified by SPICE simulation and circuit experiments.