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首先介绍了光刻技术的发展及其面临的挑战。随着纳米加工技术的发展,纳米结构器件必将成为未来集成电路的基础,而纳米光刻技术是纳米结构制作的基础,基于表面等离子体的纳米光刻作为一种新兴技术有望突破45nm节点从而极大提高光刻的分辨力。介绍了表面等离子体的特性,对表面等离子体(SPs)在光刻中的应用作了回顾和分析,指出在现有的利用表面等离子体进行纳米光刻的实验装置中,或采用单层膜的超透镜(Superlens),或采用多层膜的Super-lens,但都面临着如何克服近场光刻这一难题;结合作者现有课题分析了表面等离子体光刻的发展方向,认为结合多层膜的远场纳米光刻方法是表面等离子体光刻的发展方向。
First introduced the development of photolithography technology and its challenges. With the development of nanofabrication technology, nanostructured devices will surely become the foundation of future integrated circuits, while nanolithography is the foundation of nanostructure fabrication. Nanophase based on surface plasmon is expected to break 45nm node as an emerging technology Greatly improve the lithography resolution. The characteristics of surface plasmon are introduced. The applications of surface plasmons (SPs) in lithography are reviewed and analyzed. It is pointed out that in the existing experimental apparatus for nanolithography using surface plasmon or single layer film (Superlens) or Super-lens with multilayer films, but all face the difficult problem of how to overcome the near-field lithography. According to the author’s existing problems, the development direction of surface plasmon photolithography is analyzed. The far-field nano-lithography method of the film is the development direction of the surface plasmon photolithography.