利用扫描电子显微镜 (SEM)、Raman光谱分析了Si衬底上金刚石膜核化和生长的过程 ,并着重分析了核化过程产生的SiC的性能。利用划痕法测量了在WC衬底上沉积SiC和未沉积SiC时生长金刚石膜的粘附力 ,同时还分析了WC衬底上有和没有SiC沉积层时表面附近金刚石膜的内应力。结果表明 ,SiC层大大地增强了含碳粒子的聚集和金刚石膜与衬底之间的粘附性 ,降低了金刚石膜与衬底之间的内应力 The nucleation and growth of diamond films on Si substrates were analyzed by scanning electron microscopy (SEM) and Raman spectroscopy, and the properties of SiC produced by nucleation were analyzed emphatically. The adhesion of diamond-like carbon films deposited on SiC substrates and un-deposited SiC films was measured by the scratch method. The internal stress of the diamond films near the surface with and without SiC coatings was also analyzed. The results show that the SiC layer greatly enhances the aggregation of the carbon-containing particles and the adhesion between the diamond film and the substrate, reduces the internal stress between the diamond film and the substrate