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本文在研究了铋(Ⅲ)—8-羟基喹哪啶(8-OXQ)体系极谱行为的基础上,详细研究了阴离子表面活性剂十二烷基苯磺酸钠(SDBS)对该体系示波极谱电流(ip)增敏机理。建立了测定高温合金中痕量(10~(-5)—10~(-4)％)铋的高灵敏新方法,检出限为0.4ng/ml(1.9×10~(-9)mol/L),结果可靠、满意。文中对比了Bi(Ⅲ)和8-羟基喹啉(8-OX)及其衍生物体系结合物峰电流以及Bi(Ⅲ),Pb(Ⅱ)-8-OXQ体系和Cu(Ⅱ),Cd(Ⅱ),Zn(Ⅱ)—乙二胺体系被SDBS增敏效应,然后提出有关体系被SDBS增敏的机理和规律。
Based on the investigation of the polarographic behavior of bismuth (Ⅲ) -8-hydroxyquinaldine (8-OXQ) system, the effect of anionic surfactant sodium dodecyl benzene sulfonate (SDBS) Polarographic current (ip) sensitization mechanism. A sensitive and sensitive method for the determination of trace (10 ~ (-5) -10 ~ (-4)%) bismuth in superalloy was established with the detection limit of 0.4ng / ml (1.9 × 10 -9 mol / L), the result is reliable and satisfied. The peak currents of Bi (Ⅲ) and 8-OX (8-OX) and their derivatives were compared with those of Bi (Ⅲ), Pb (Ⅱ) -8-OXQ and Cu (Ⅱ) Ⅱ), Zn (Ⅱ) - ethylenediamine system was sensitized by SDBS, and then the mechanism and regulation of SDBS sensitization were proposed.