论文部分内容阅读
利用 Si H4 和 Ge H4 作为源气体 ,对 UHV/CVD生长 Si1- x Gex/Si外延层的表面反应机理进行了研究 ,通过 TPD、RHEED等实验观察了 Si( 1 0 0 )表面 Si H4 的饱和吸附、热脱附过程 ,得出 Si H4 的分解应该是每个 Si H4 分子的 4个 H原子全部都吸附到了 Si表面 ,Si H4 的吸附率正比于表面空位的 4次方 ,并分析了 Ge H4 的表面吸附机制 .在此基础上建立了 UHV/CVD生长Si1- x Gex/Si的表面反应动力学模型 ,利用模型对实验结果进行了模拟 ,二者符合得很好
The surface reaction mechanism of UHV / CVD grown Si1-x Gex / Si epilayers was studied by using Si H4 and Ge H4 as source gases. The saturation of Si H4 on Si (100) surface was observed by TPD and RHEED experiments. Adsorption, thermal desorption process, concluded that the decomposition of Si H4 Si H4 molecule per molecule should be all four H atoms adsorbed to the Si surface, Si H4 adsorption rate is proportional to the surface vacancy of the fourth power, and analysis of Ge H4 surface adsorption mechanism.On this basis, the surface reaction kinetics model of UHV / CVD growth Si1-x Gex / Si was established, the model was used to simulate the experimental results, the two in good agreement