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用化学气相淀积方法在Si(100)衬底上外延生长Ge组分渐变的Si1-xGex∶C合金薄膜。本文通过能量色散谱仪(EDS)和扫描电子显微镜(SEM)对合金薄膜的元素深度分布和表面形貌进行了表征,分析研究了外延层的生长温度、生长时间对Si1-xGex∶C合金薄膜性质的影响。结果表明,Si1-xGex∶C外延层生长温度和生长时间一定范围内的增加加强了岛与岛之间的合并,促进了衬底Si原子向表面扩散、表面Ge原子向衬底扩散,且生长温度比生长时间对Si、Ge原子互扩散的影响大。
Epitaxial growth of Ge-composition-graded Si1-xGex:C alloy thin films on Si (100) substrates by chemical vapor deposition. In this paper, the elemental depth distribution and surface morphology of the alloyed films were characterized by energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM). The effects of the growth temperature and the growth time of the epitaxial layer on the Si1-xGex:C alloy films The nature of the impact. The results show that the increase of the growth temperature and the growth time of Si1-xGex:C epitaxial layer enhances the merging of islands and islands, promotes the diffusion of substrate Si atoms to the surface and the diffusion of surface Ge atoms to the substrate, The effect of temperature on the mutual diffusion of Si and Ge atoms is larger than the growth time.