采用“电解水氧化显微法”,以大约270埃的精度检测了硼、磷杂质通过掩膜窗口在硅中扩散的纵向和横向的深度。讨论了杂质在硅中电离扩散的理论问题,在双扩散工艺的基础上,提出了新生表面层原子的氧化模型,同时给出了显微考证的实验照片。 The longitudinal and lateral depths of diffusion of boron and phosphorus impurities in silicon through the mask window were examined using an “electrolytic water oxidation microscopy” with an accuracy of about 270 angstroms. The theoretical problem of impurity ion diffusion in silicon was discussed. On the basis of double diffusion process, the oxidation model of the nascent surface layer atoms was proposed. At the same time, experimental pictures of microscopic textual research were given.