论文部分内容阅读
In order to explore the novel application of the transparent hole-transporting material 5,10,15-tribenzyl-5Hdiindolo[3,2-a:3',2'-c]-carbazole(TBDI),in this article TBDI is used as an active layer but not a buffer layer in a photodetector(PD),organic light-emitting diode(OLED),and organic photovoltaic cell(OPV) for the first time.Firstly,the absorption and emission spectra of a blend layer comprised of TBDI and electron-transporting material bis-(2-methyl-8-quinolinate) 4-phenylphenolate(BAlq) are investigated.Based on the absorption properties,an organic PD with a peak absorption at 320 nm is fabricated,and a relatively-high detectivity of 2.44×10~(11) cm· Hz~(1/2)/W under 320-nm illumination is obtained.The TBDI/tris(8-hydroxyquinoline) aluminum(Alq_3) OLED device exhibits a comparable external quantum efficiency and current efficiency to a traditional 4,4-bis[N-(l-naphthyl)-N-phenyl-amino]biphenyl(α-NPD)/Alq_3 OLED.A C_(70)-based Schottky junction with 5 wt%-TBDI yields a power conversion efficiency of 5.0%,which is much higher than 1.7%for an α-NPD-based junction in the same configuration.These results suggest that TBDI has some promising properties which are in favor of the hole-transporting in Schottky junctions with a low-concentration donor.
In order to explore the novel application of the transparent hole-transporting material 5,10,15-tribenzyl-5Hdiindolo [3,2-a: 3 ', 2'-c] -carbazole (TBDI) as an active layer but not a buffer layer in a photodetector (PD), organic light-emitting diode (OLED), and organic photovoltaic cell (OPV) for the first time. Firstly, the absorption and emission spectra of a blend layer comprised of TBDI and electron-transporting material bis- (2-methyl-8-quinolinate) 4-phenylphenolate (BAlq) were investigated. Based on the absorption properties, an organic PD with a peak absorption at 320 nm is fabricated, and a relatively-high detectivity of 2.44 × 10-11 cm · Hz ~ (1/2) / W under 320-nm illumination was obtained. The TBDI / tris (8-hydroxyquinoline) aluminum device exhibits a comparable external quantum efficiency and (70) -based Schottky junction with 5 wt% -TBDI (4,4-bis [N- (l-naphthyl) -N-phenyl-amino] biphenyl yields a power co nsefficiency of 5.0%, which is much higher than 1.7% for an α-NPD-based junction in the same configuration. these results suggest that TBDI has some promising properties which are in favor of the hole-transporting in Schottky junctions with a low -concentration donor.