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针对SiC功率金属半导体场效应晶体管如何在实现高性能的同时保证器件长期稳定的工作,从金属半导体接触、器件制造过程中的台阶控制、氧化与钝化层的设计及器件背面金属化实现等方面进行了分析;并结合具体工艺,对比给出了部分实验结果。从测试数据看,研制的微波SiC MESFET器件性能由研制初期在S波段瓦级左右的功率输出及较低的功率增益和功率附加效率,达到了在实现大功率输出的条件下,比Si器件高的功率增益和30%以上的功率附加效率,初步体现了SiC MESFET微波功率器件的优势,器件的稳定性也得到了提升,为器件性能和可靠性的进一步提升奠定了设计和工艺基础。
Aiming at how the SiC power metal-semiconductor field-effect transistor can ensure the long-term stability of the device while realizing high performance, from the metal semiconductor contact, step control in the device manufacturing process, the design of the oxidation and passivation layer and the backside metallization of the device Carried out the analysis; and combined with specific technology, compared to some experimental results. From the test data, the performance of the developed microwave SiC MESFET devices from the initial development of the S-band wattage level around the power output and lower power gain and power added efficiency, reached the conditions in the realization of high-power output, high-Si devices Power gain and more than 30% additional power efficiency, initially reflects the advantages of SiC MESFET microwave power devices, device stability has also been improved, the device performance and reliability to further enhance the design and process laid the foundation.