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采用双靶直流磁控共溅射法制备了掺铜TiO2薄膜,通过控制Cu靶的溅射功率改变Cu的掺杂量,研究了掺铜对TiO2薄膜的结构、光吸收及光催化性能的影响。结果表明:掺Cu能够改善薄膜的表面形貌与结晶质量,提高薄膜的光吸收性能。随着掺铜量的增加,TiO2薄膜的锐钛矿(101)衍射峰越来越强,且吸收边逐渐红移。Cu靶的溅射功率大于3 W,薄膜中就会出现CuO晶相。掺Cu后,TiO2薄膜的光催化性能明显增强。随着Cu的溅射功率的增大,TiO2薄膜的光催化性能先增强,后减弱。Cu的溅射功率为5 W的样品光催化性能最好。
The Cu-doped TiO2 thin films were prepared by DC magnetron co-sputtering method. The Cu doping amount was controlled by controlling the sputtering power of Cu target. The effects of Cu doping on the structure, light absorption and photocatalytic activity of TiO2 thin films were studied . The results show that Cu doping can improve the surface morphology and crystal quality of the film and improve the light absorption properties of the film. With the increase of Cu content, the anatase (101) diffraction peaks of TiO2 thin films become stronger and stronger, and the absorption edge gradually redshifts. Cu target sputtering power is greater than 3 W, the film will appear CuO crystal phase. After Cu doping, the photocatalytic activity of TiO2 film is obviously enhanced. With the increase of sputtering power of Cu, the photocatalytic activity of TiO2 film first increases and then decreases. Cu sputtering power of 5 W samples photocatalytic best.