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利用X射线衍射(XRD)和X射线吸收精细结构(XAFS)方法研究了磁控共溅射方法制备的MnxGe1-x薄膜样品的结构随掺杂磁性原子Mn含量的变化规律.XRD结果表明,在Mn的含量较低(7.0%)的Mn0.07Ge0.93样品中,只能观察到对应于多晶Ge的XRD衍射峰,而对Mn含量较高(25.0%,36.0%)的Mn0.25Ge0.75和Mn0.36Ge0.64样品则明显出现Ge3Mn5相的衍射峰,且Ge3Mn5的比例随着Mn的含量升高而增加.XAFS结果表明,对于Mn0.07Ge0.93样品,Mn主要以替代位的形式存在,占75%左右的比例;在Mn0.25Ge0.75和Mn0.36Ge0.64的样品中,除了一小部分的Mn原子以替代位的形式存在之外,大部分Mn原子以Ge3Mn5化合物的形式存在.
X-ray diffraction (XRD) and X-ray absorption fine structure (XAFS) were used to study the structure of MnxGe1-x thin films prepared by magnetron sputtering. The XRD results showed that the In Mn0.07Ge0.93 samples with low Mn content (7.0%), only XRD diffraction peak corresponding to polycrystalline Ge was observed, and only Mn0.25Ge0 with higher Mn content (25.0%, 36.0%) was observed. 75 and Mn0.36Ge0.64 samples obviously show the diffraction peak of Ge3Mn5 phase, and the proportion of Ge3Mn5 increases with the increase of Mn content.The XAFS results show that for Mn0.07Ge0.93 sample, Mn is mainly in the form of substitution sites , Accounting for about 75% of the ratio; In Mn0.25Ge0.75 and Mn0.36Ge0.64 samples, except for a small part of the Mn atoms in the form of alternative bits, the majority of Mn atoms in the form of Ge3Mn5 compounds exist.