论文部分内容阅读
本文报导了采用聚焦激光束在Ⅲ—Ⅴ族化合物半导体表面上形成欧姆接触。我们利用脉冲红宝石激光器(λ=0.6943微米),脉冲钇铝石榴石激光器(λ=1.06微米)和Q-开关CO_2激光器(λ=10.6微米)的脉冲群,已在几种Ⅲ—Ⅴ族化合物(Gap,GaAs,GaSb,InAs和InSb)上形成了“欧姆”接触。初步结果表明,只有波长落在半导体吸收带内(自由载流子吸收或带到带跃迁区)的那些激光器能够成功地用于这种目的。用这种方法制作的接触所给出的欧姆特性类似于用常规技术得到的特性。用这种方法制备欧姆接触不需要任何特殊的表面制备,而且,因为加热被限制在局部的表面区,因此,它对器件的结特性没有影响。
This paper reports the formation of ohmic contacts on the surface of Group III-V compound semiconductors using focused laser beams. We have used pulsed clusters of pulsed ruby lasers (λ = 0.6943 μm), pulsed yttrium aluminum garnet lasers (λ = 1.06 μm), and Q-switched CO2 lasers (λ = 10.6 μm) Gap, GaAs, GaSb, InAs and InSb). Preliminary results show that only those lasers whose wavelength falls within the semiconductor absorption band (free carrier absorption or band-to-band transition) can be successfully used for this purpose. The ohmic properties given by the contacts made in this way are similar to those obtained with conventional techniques. Making ohmic contacts in this way does not require any special surface preparation, and because heating is confined to a localized surface area, it has no effect on the junction characteristics of the device.