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采用自主开发的SiC外延材料和工艺技术,相继实现了S波段连续波状态下输出功率瓦级和10 W的SiC MESFET。经过版图设计的改进和工艺条件的优化,取得了S波段连续波状态下输出功率大于20 W,功率增益大于12 dB,功率附加效率大于30%的SiC MESFET研制结果。器件的功率增益和输出功率较以往的研制结果均得到显著提高,器件的反向截止泄漏电流也大幅度降低。由于器件未采用内匹配结构,其体积也比一般内匹配器件的体积小。研制结果为多胞合成实现更大功率输出的器件创造了条件,也使S波段连续波大功率输出器件的研制水平上了一个新的台阶。
Using SiC self-developed epitaxial materials and technology, have been achieved in the S-band CW power output wattage and 10 W SiC MESFET. After the improvement of the layout design and the optimization of the process conditions, the development of SiC MESFET with the output power greater than 20 W, the power gain greater than 12 dB and the additional power efficiency greater than 30% in the S-band continuous wave was obtained. Device power gain and output power than the previous research results have been significantly improved, the device reverse-blocking leakage current is also greatly reduced. Because the device does not use the internal matching structure, its volume is smaller than the size of the internal matching device. The results of the research have created conditions for multicomponent synthesis to realize more power output devices and also have made the development of S-band CW power output devices a new level.