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The electrical properties of Ni0:95Pt0:05-germanosilicide/Si1-xGex contacts on heavily doped p-type strained Si1-xGex layers as a function of composition and doping concentration for a given composition have been investigated.A four-terminal Kelvin-resistor structure has been fabricated by using the conventional complementary metal–oxide–semiconductor(CMOS) process to measure contact resistance.The results showed that the contact resistance of the Ni0:95Pt0:05-germanosilicide/Si1-xGex contacts slightly reduced with increasing the Ge fraction.The higher the doping concentration,the lower the contact resistivity.The contact resistance of the samples with doping concentration of 4 1019 cm-3 is nearly one order of magnitude lower than that of the samples with doping concentration of 5 1017 cm-3.In addition,the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.
The electrical properties of Ni0: 95Pt0: 05-germanosilicide / Si1-xGex contacts on heavily doped p-type strained Si1-xGex layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional complementary metal-oxide-semiconductor (CMOS) process to measure contact resistance. The results showed that the contact resistance of the Ni0: 95Pt0: 05- germanosilicide / Si1-xGex contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. the contact resistance of the samples with doping concentration of 4 1019 cm-3 is nearly one order of magnitude lower than that of the samples with doping concentration of 5 1017 cm-3 .In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.