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我们在同成份铌酸锂晶体中掺入四价离子铪,生长了掺杂浓度分别为2、4、6mol%的掺铪铌酸锂系列晶体。掺铪浓度达到4mol%时,晶体的抗光损伤能力为5×105W/cm2,比同成份纯铌酸锂晶体提高了4个数量级。应用全息法测得掺4、6mol%铪的铌酸锂晶体最大折射率变化为8.7×10-6,与高掺镁(6.5mol%)铌酸锂晶体的类似。晶体的红外吸收谱和紫外-可见光吸收谱也显示,掺杂浓度为4mol%时具有明显的阈值特征。由此可以确定铪离子在铌酸锂晶体中的阈值浓度约为4mol%。
We doped in the same composition of lithium niobate tetravalent ions of hafnium, doping concentrations were grown 2,4,6 mol% of lithium-doped lithium niobate crystals. When the concentration of hafnium is 4 mol%, the light damage resistance of the crystal is 5 × 10 5 W / cm 2, which is 4 orders of magnitude higher than that of pure lithium niobate. The maximum index of refraction of LiNbO 4 doped with 4,6 mol% hafnium measured by holography was 8.7 × 10 -6, which was similar to the high MgO (6.5 mol%) lithium niobate crystal. The infrared absorption spectrum and UV-visible absorption spectrum of the crystal also show that the doping concentration of 4mol% has obvious threshold characteristics. From this, it can be confirmed that the threshold concentration of hafnium ion in the lithium niobate crystal is about 4 mol%.