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Vishay推出采用PowerPAIR 6 mm×3.7 mm封装和TrenchFET GenⅢ技术的非对称双通道TrenchFET功率MOSFET——SiZ710DT,新器件比其前一代器件的导通电阻减小43%,同时具有更高的最大电流并提高效率。SiZ710DT在一个小尺寸封装中整合了低边和高边MOSFET,导通电阻低。SiZ710DT的低边Channel 2 MOSFET利用了非对称结构在优化空间上的
Vishay Introduces SiZ710DT Asymmetric Dual Channel TrenchFET Power MOSFET in PowerPAIR 6 mm × 3.7 mm Package and TrenchFET Gen Ⅲ Technology, New Device Delivers 43% Reduced On-State Resistance over Previous Generation Devices with Higher Maximum Current Improve efficiency. The SiZ710DT combines low-side and high-side MOSFETs in a small package with low on-resistance. The low-side Channel 2 MOSFETs on the SiZ710DT utilize asymmetric architectures to optimize space