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采用0.13μm Si Ge双极互补型金属氧化物半导体(Bi CMOS)工艺,设计了一款X波段功率放大器芯片。通过采用共射共基放大器电路结构和有源线性化偏置电路,提高了电路耐压值和功放最大输出功率。通过两级共射共基放大电路级联,结合级间匹配电路及输出匹配电路,提高了放大器的增益和工作带宽。采用非均匀功率管版图布局及镇流电阻,提升功率放大器电路可靠性。测试结果表明,在8~12 GHz频段内,放大器回波损耗均小于-10 d B,小信号增益大于30 d B,1 d B压缩点输出功率为16 d Bm,饱和功率大于19 d Bm,峰值饱和功率附加效率大于18%。该放大器工作在AB类,采用5 V供电,静态工作电流为80 m A,面积为1.22 mm×0.73 mm。
A 0.13μm SiGe bipolar complementary metal-oxide-semiconductor (Bi CMOS) process was used to design an X-band power amplifier chip. Through the use of cascode amplifier circuit structure and active linearization bias circuit, improve the circuit voltage and amplifier maximum output power. By two cascade cascode amplifier cascade, with the matching circuit and the output matching circuit, improve the amplifier gain and bandwidth. Using non-uniform power tube layout layout and ballast resistance, improve power amplifier circuit reliability. The test results show that the amplifier return loss is less than -10 d B and the small signal gain is greater than 30 d B in the 8-12 GHz band. The output power of the 1 d B compression point is 16 d Bm and the saturation power is greater than 19 d Bm. Peak saturation power additional efficiency greater than 18%. The amplifier operates in class AB with 5 V supply and has a quiescent operating current of 80 mA and an area of 1.22 mm × 0.73 mm.