论文部分内容阅读
采用电子背散射衍射(EBSD)技术研究了黄铜H68初始样品经6%轧制后在650℃退火不同时间的晶界特征分布(GBCD)。结果表明:特殊晶界比例随退火时间增加而增大,退火10 min时达到峰值76%;同时互成Σ3n(n=1,2,3)界面关系的特殊晶粒团平均尺寸超过300μm,使外围的一般大角晶界网络连通性被阻断,实现了GBCD的优化。分析指出:退火中非共格∑3晶界优先在三叉晶界(triple junctions)处形核并在界面应力(SIBM)作用下迁移,迁移中发生∑3n(n=1,2,3)晶界的交互反应,这可能是样品晶界特征分布随退火时间演化的主要机制。
Electron backscatter diffraction (EBSD) technique was used to study the grain boundary characteristic distribution (GBCD) of the initial sample of brass H68 after 6% annealing at 650 ℃ for 6 h. The results show that the proportion of special grain boundaries increases with the increase of annealing time and reaches 76% at 10 min after annealing. At the same time, the average size of special grains with Σ3n (n = 1, 2, 3) Peripheral general large-angle grain boundary network connectivity is blocked, to achieve GBCD optimization. It is pointed out that the non-coherent Σ3 grain boundary preferentially nucleates at the triple junctions and migrates under the influence of interfacial stress (SIBM) during the annealing process. Σ3n (n = 1, 2, 3) Which may be the main mechanism of grain boundary distribution of samples with the evolution of annealing time.