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从实验及模拟角度对比研究了引晶段的晶粒密度和取向随晶粒生长高度(研究位置距试样底面的高度)的变化规律,并给出了引晶段参数的设计准则.采用EBSD晶体取向成像技术获得了引晶段截面的晶粒形貌和取向极图;采用CA-FD方法,针对单晶定向凝固过程进行数理建模与仿真,实现了凝固过程的三维宏观温度场与微观组织生长的模拟计算.从宏、微观角度解释了定向凝固过程的晶粒竞争演化行为,为引晶段设计提供理论支持.
The rules of grain density and orientation of the seeding section with the height of the grain growth (the height of the study site from the bottom of the specimen) were comparatively studied experimentally and simulatively, and the design criteria of the seeding section parameters were given.EBSD The crystal morphology and orientation polarogram of the section of the seeding section were obtained by the crystal orientation imaging technique. The three-dimensional macroscopic temperature field and the microscopic view of the solidification process were achieved by CA-FD method for the mathematical modeling and simulation of the single-crystal directional solidification process. The simulation calculation of the growth of the microstructure illustrates the grain competition and evolution of the directional solidification process from macroscopic and microscopic perspectives and provides theoretical support for the design of the seeding section.