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随着半导体集成电路的超大规模化和集成光学领域科研工作的进展,微细图形的线条宽度已进入亚微米数量级.由于衍射的限制,传统的光刻工艺不能满足要求,同时,由于钻蚀现象,湿法化学刻蚀也不能适应微细图形的加工.人们借助于电子束曝光和离子束刻蚀,以获得高分辨率的图形.反应离子束刻蚀RIBE(Reactive Ion Beam Etchins)是一项很有潜力的微细加工技术,它具有刻蚀速率快,选择性好,分辨率高,无钻蚀和表面损伤小等优点.本文报道CF_4反应离子束刻蚀带有电子束抗蚀剂PMMA 掩模的SiO_2的一些实验结果.
With the progress of scientific research in the field of ultra-large-scale integrated optics and integrated optics of semiconductor integrated circuits, the line width of fine patterns has entered the order of submicron.Due to the limitation of diffraction, the traditional lithography process can not meet the requirements, meanwhile, due to the phenomenon of under- Wet chemical etching is also not suitable for the processing of fine patterns. People rely on electron beam lithography and ion beam lithography for high-resolution graphics. Reactive Ion Beam Etchins (RIBE) Potential micro-processing technology, it has the advantages of fast etching rate, good selectivity, high resolution, no drilling and surface damage.This paper reports CF_4 reactive ion beam etching with electron beam resist PMMA mask Some experimental results of SiO_2.