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用简单化学反应的方法 ,采用非空间限制的条件 ,成功地在LaAlO3 衬底上制备了GaN纳米线。分别用X射线粉末衍射、场发射扫描电镜和高分辩电镜等对其成分、形貌及其结构进行了表征。制备的GaN纳米线直径大部分为 10～ 5 0nm ,且多呈平直光滑状态 ;纳米线的成分为六方晶系氮化镓晶体。
GaN nanowires were successfully fabricated on LaAlO3 substrates by simple chemical reaction and non-space-limited conditions. Its composition, morphology and structure were characterized by X-ray powder diffraction, field emission scanning electron microscopy and high-resolution electron microscopy. The prepared GaN nanowires mostly have a diameter of 10-500 nm, mostly flat and smooth; the composition of the nanowires is hexagonal gallium nitride crystal.