英国格拉斯哥大学和剑桥大学的研究员们最近表示,在低电阻硅基上成功研制出目前行业内最高频率性能的氮化镓高电子迁移率晶体管。该项技术有望实现成本较低的X波段高频应用,同时,鉴于电源管理和射频功能可逐步集成在硅基上,研究团队还在持续发掘氮化镓器件在移动通信领域的应用。一般情况下,高频器件中倾向于采用高阻衬底,以避免同射频信号耦合时产生的损耗。高阻硅材料的价格也比较昂贵。 Researchers at the University of Glasgow and the University of Cambridge recently said they have successfully developed gallium nitride high electron mobility transistors of the highest frequency performance in the industry on low resistance silicon substrates. The technology is expected to enable lower-cost X-band high-frequency applications, while the research team continues to explore the use of GaN devices in mobile communications given the gradual integration of power management and RF functions on Si substrates. Under normal circumstances, high-frequency devices tend to use high-resistance substrate, to avoid coupling with the RF signal generated loss. High-resistance silicon materials are also more expensive.