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The structural and surface properties of high-quality epitaxial cubic MgxZn1-xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffracti on and atomic force microscopy respectively. For films of about 500nm thick, sca ns over a 30μm × 30μm area revealed a surface roughness Ra of about 100nm. Th is relatively large surface roughness is primarily attributed to the particulate and outgrowth during the PLD process. A good epitaxial growth on LaAlO3 (LAO ) (100) substrates, however has been obtained for composition x = 0.9, 0.7 and 0 .5 with the heteroepitaxial relationship of (100)■∥(100)LAO (out-of-plane) and (011)■∥(010)LAO (in-plane). These structural qualities suggest that cubic Mgx Zn1-xO alloys films have good potential in a variety of optoelectronic device ap plications.
The structural and surface properties of high-quality epitaxial cubic MgxZn1-xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffracti on and atomic force microscopy respectively. For films of about 500 nm thick, sca ns over a 30 μm × 30μm area revealed a surface roughness Ra of about 100nm. Th is relatively large surface roughness is attributed to the particulate and outgrowth during the PLD process. A good epitaxial growth on LaAlO3 (LAO) (100) substrates, however has been obtained for composition x = 0.9, 0.7 and 0.5 with the heteroepitaxial relationship of (100) ■ ∥ (100) LAO (out-of-plane) and (011) ■ ∥ (010) LAO that cubic Mgx Zn1-xO alloys films have good potential in a variety of optoelectronic devices ap plications.