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针对基于碳纳米管阵列构成的光电器件,建立基于场效应器件结构的电磁散射模型,对其光电吸收特性进行了仿真分析。模型仿真结果表明,当碳纳米管阵列间距为入射光波长的整数倍时,碳纳米管的吸收功率达到峰值,当在两个波长之间,吸收功率按线性衰减,对应于入射光的不同倍数波长的吸收功率的峰值随波长的增加而线性衰减。在吸收功率峰值附近,吸收功率随阵列周期间距的变化而敏感。
Aiming at the optoelectronic devices based on the carbon nanotube array, an electromagnetic scattering model based on the field effect device structure is established and its photoelectric absorption characteristics are simulated. The simulation results show that when the distance between the carbon nanotubes array is an integer multiple of the wavelength of the incident light, the absorption power of the carbon nanotubes reaches a peak. When the absorption power decreases linearly between the two wavelengths, corresponding to different multiples of the incident light The peak absorption power of a wavelength decreases linearly with increasing wavelength. Near the peak absorbed power, the absorbed power is sensitive to changes in the pitch of the array.