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在室温条件下 ,用封闭式电子回旋共振 (MCECR)等离子体溅射方法沉积了SrTiO3(STO)膜 .用Ar等离子体在Si基片上溅射的STO膜是非晶的 ,然而用Ar/O2 等离子体在Pt/Ti/SiO2 /Si上溅射的是充分结晶的STO膜 .为了使非晶薄膜结晶 ,用电炉加热或 2 8GHz微波辐射对非晶STO膜进行退火处理 .采用微波辐射 ,使基片温度为 5 73K时 ,在Si上的STO膜退火后的介电常数大约为 2 6 0 ,这值近似等于块状STO材料的介电常数 .由于微波辐射能够降低薄膜的退火温度和提高薄膜的电特性 ,因而被认为是非常有用的
The SrTiO3 (STO) films were deposited by closed electron cyclotron resonance (MCECR) plasma sputtering at room temperature.The STO films sputtered on Si substrates by Ar plasma were amorphous, whereas the ArO O2 plasma In order to make the amorphous film crystallized, the amorphous STO film was annealed by electric furnace heating or microwave radiation of 2 8 GHz.Using microwave irradiation, the substrate When the temperature is 5 73K, the dielectric constant of the STO film annealed on Si is about 260, which is approximately equal to the dielectric constant of the bulk STO material.Because the microwave radiation can reduce the annealing temperature of the film and improve the film The electrical characteristics, which is considered to be very useful