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Beta-type gallium oxide(β-Ga_2O_3) is a new attractive material for optoelectronic devices. Different methods had been tried to grow high quality β-Ga_2O_3 crystals. In this work, crystal growth of Ga_2O_3 has been carried out by chemical vapor transport(CVT) method in a closed quartz tube using C as transport agent and sapphire wafer as seed. The CVT mass flux has been analyzed by theoretical calculations based on equilibrium thermodynamics and 1D diffusional mass transport. The crystal growth experimental results are in agreement with the theoretical predictions. Influence factors of Ga_2O_3 crystal growth, such as temperature distribution, amount of C as transport agent used, have also been discussed. Structural(XRD) and optical(Raman spectroscopy, photoluminescence spectrum) properties of the CVT-Ga_2O_3 crystal are presented.
Different methods had been tried to grow high quality β-Ga_2O_3 crystals. In this work, crystal growth of Ga_2O_3 has been carried out by chemical vapor transport (β-Ga_2O_3) is a new attractive material for optoelectronic devices. CVT) method in a closed quartz tube using C as transport agent and sapphire wafer as seed. The CVT mass flux has been analyzed by theoretical calculations based on equilibrium thermodynamics and 1D diffusional mass transport. The crystal growth experimental results are in agreement with the theoretical Prediction. Influence factors of Ga 2 O 3 crystal growth, such as temperature distribution, amount of C as transport agent used, have also been discussed. Structural (XRD) and optical (Raman spectroscopy, photoluminescence spectrum) properties of the CVT-Ga 2 O 3 crystal are presented.