论文部分内容阅读
日立制作所中央研究所于一九七九年首次报导关于试制以氢化非晶态硅作为靶面材料的摄象管的消息,其灵敏度与硒碲视象管相同,对于2/3英寸的管子灵敏度可达0.9微安/10勒克司,但惰性较大,约为10％;后来发现在透明导电层与非晶态硅层之间插入S_iO_2薄层可大大改善暗电流,增加工作靶压,从而使惰性得到改善。制作氢化非晶态硅靶既可在(Ar+H_2)气氛中用磁控射频溅射多晶或单晶硅片,也可用辉光放电分解硅烷(SiH_4)同时掺杂的方法。用后一方法也制出了类似性能的摄象管。本文对氢化非晶态硅靶面的物理特性、制作工艺及管子性能作一简要的介绍。
The Hitachi Institute's Central Research Institute first reported in 1979 about the trial production of an imaging tube with hydrogenated amorphous silicon as a target material with the same sensitivity as selenium telluride tubes. For a 2/3 inch tube The sensitivity is up to 0.9 microamperes / 10 lux, but the inertness is about 10%. Later, it was found that inserting a thin layer of S_iO 2 between the transparent conductive layer and the amorphous silicon layer can greatly improve the dark current and increase the working target pressure. So inertness is improved. Hydrogenated amorphous silicon targets can be prepared by magnetron RF sputtering of polycrystalline or monocrystalline silicon wafers in an atmosphere of (Ar + H 2) or by glow discharge disintegrating silane (SiH 4). With the latter method also produced a similar performance tube. In this paper, the physical properties of hydrogenated amorphous silicon target surface, the production process and tube properties for a brief introduction.