介绍了一种 ECR微波放电和脉冲激光沉积相结合低温沉积 Al N薄膜的新方法 .在 ECR氮等离子体环境中用脉冲激光烧蚀 Al靶 ,以低于 80℃的衬底温度在 Si衬底上沉积了 Al N薄膜 .结合样品表征和等离子体光谱分析 ,探讨了膜层沉积的机理 ,等离子体中活性氮物质的存在是 Al- N化合的重要因素 ,等离子体对衬底的辐照促进膜层的形成 A new method combining ECR and pulsed laser deposition with low temperature deposition of AlN thin films was introduced.An target was ablated by pulsed laser in an ECR nitrogen plasma environment with a substrate temperature below 80 ° C on a Si substrate Al N thin films were deposited on the substrate.The mechanism of film deposition was discussed by the combination of sample characterization and plasma spectrum analysis.The existence of active nitrogen in the plasma was an important factor of Al- Film formation