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评价制造红外敏感器的各种原理,就当前要求而言,人们的兴趣不仅仅是探测器本身的参数,而且还关心探测器的性能。本文通过非本征硅光电导传感器、CdHgTe 光伏列阵(此为重点)、PtSi 肖特基二极管列阵以及热释电敏感器来阐述目前红外探测器的技术水平。可供选择的新工艺不断问世,本文将讨论其中最有希望的Ⅲ—Ⅴ族化合物多量子阱探测器和高临界温度超导体。
Evaluating the various principles of creating infrared sensors, the interest of the current not only is the parameters of the detector itself, but also the performance of the detector. In this paper, extrinsic silicon photoconductive sensors, CdHgTe photovoltaic array (this is the focus), PtSi Schottky diode arrays and pyroelectric sensors to explain the current level of infrared detectors. Alternative new technologies continue to come out, this article will discuss one of the most promising group III-V compound MQW detectors and high critical temperature superconductors.