【摘 要】
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The defect changes in 6H-SiC after annealing and 10 MeV electron irradiation have been studied by using a variable-energy positron beam. It was found that after
【机 构】
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Department of Modern Physics, University of Science and Technology of China, Hefei 230027“,”Departme
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The defect changes in 6H-SiC after annealing and 10 MeV electron irradiation have been studied by using a variable-energy positron beam. It was found that after annealing, the defect concentration in n-type 6H-SiC decreased due to recombination with interstitials. When the sample was annealed at 1400℃ for 30min in vacuum, a 20-nm thickness Si layer was found on the top of the SiC substrate, this is a direct proof of the Si atoms diffusing to surface when annealed at high temperature stages. After 10 MeV electron irradiation, for n-type 6H-SiC, the S parameter increased from 0.4739 to 0.4822, and the relative positron-trapping rate was about 27.878 times of the origin sample, this shows that there are some defects created in n-type 6H-SiC. For p-type 6H-SiC, it is very unclear, this may be because of the opposite charge of vacancy defects.
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