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利用DCXRD(X射线双晶衍射 ) ,PL谱 (光荧光 )和SEM (扫描电子显微镜 ) ,对在GaAs( 1 0 0 )衬底上用低压MOCVD方法生长的立方相GaN进行了深入研究 ,发现GaN的晶体质量和光学性质良好 .其X射线双晶衍射摇摆曲线 (Rockingcurve) ( 0 0 2 )衍射的FWHM(半峰宽 )为 40min ,其PL谱的FWHM为 1 2nm ,实现了高晶体质量和高光学质量的一致性 .这也是首次报道 1 5 μm以上立方相GaN外延膜光荧光的发光情况 .同时还用X射线三轴晶衍射估算了薄膜内应变和晶粒尺寸 .
The cubic GaN grown by low pressure MOCVD on GaAs (100) substrate has been studied by DCXRD (double crystal X-ray diffraction), PL spectrum (fluorescence) and SEM (scanning electron microscope) The crystal quality and optical properties of GaN are good.The FWHM (FWHM) diffraction of the X-ray double crystal diffraction rocking curve (0 0 2) is 40 min, the FWHM of the PL spectrum is 12 nm, and the high crystal quality Which is the first time to report the luminescence of photofluorescence of cubic GaN epitaxial films with a size of more than 15 μm.They also estimate the strain and grain size in the film by X-ray triaxial diffraction.