【摘 要】
：
We demonstrate a reconfigurable black phosphorus electrical field transistor, which is van der Waals heterostructured with few-layer graphene and hexagonal boro
【机 构】
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MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key
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We demonstrate a reconfigurable black phosphorus electrical field transistor, which is van der Waals heterostructured with few-layer graphene and hexagonal boron nitride flakes. Varied homojunctions could be realized by controlling both source–drain and top-gate voltages. With the spatially resolved scanning photocurrent microscopy technique, photovoltaic photocurrents originated from the band-bending regions are observed, confirming nine different configurations for each set of fixed voltages. In addition, as a phototransistor, high responsivity (～800 mA/W) and fast response speed (～230 μs) are obtained from the device. The reconfigurable van der Waals heterostructured transistors may offer a promising structure towards electrically tunable black phosphorus-based optoelectronic devices.
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