利用脉冲激光沉积法(PLD)在Si衬底上制备NiO薄膜,利用X射线衍射(XRD)和原子力显微镜(AFM)对所制备薄膜的晶体结构和表面形貌进行表征分析,研究衬底温度和脉冲激光能量对NiO薄膜结构和形貌的影响,得到生长质量较高、择优取向的多晶NiO薄膜的一种最佳制备条件。制备了p-NiO/n-Si异质结器件,I-V特性测试表明,器件具有良好的整流特性。 NiO thin films were prepared on Si substrate by pulsed laser deposition (PLD). The crystal structure and surface morphology of the prepared films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) The effect of pulsed laser energy on the structure and morphology of NiO thin films was studied. An optimum preparation condition of polycrystalline NiO thin films with high growth quality and preferred orientation was obtained. The p-NiO / n-Si heterojunction device was prepared. The I-V characteristic test showed that the device has good rectification characteristics.