本文提出在MOSFET构成的2DEG带尾区域,复值电容可用三个模型予以描述.一维扩散模型(IDD),迁移率边模型(ME)和复数电导率模型(σ(ω)).利用器件的分散结构参数和物理模拟推导了三种模型的表达式.理论和实验作了比较.说明了理论结果在态密度函数测量中的应用. 预期这三个模型也可应用于量子化情况自旋分裂,谷分裂和朗道分裂的谷区电子导电边的情况. In this paper, we propose that the complex capacitance can be described by three models in the region of the tail end of the 2DEG formed by the MOSFET. One-dimensional diffusion model (IDD), mobility edge model (ME) and complex conductivity model (σ (ω) The results of the theoretical results and the experiments show that the theoretical results can be used in the measurement of the density of states functions.It is also expected that these three models can also be applied to the spin of quantum states Split, valley split and Landon split valley electrically conductive edges.