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本文利用红外激光光弹性仪,采用光测弹性力学中的Senarmont补偿法,解决了硅晶片小数级条纹值定量测量问题.在考虑硅晶体光弹性效应各向异性的基础上,实测了(111)、(100)单晶硅片的原始应力及氧化应力.对硅晶片原始应力的产生与消除、氧化应力在硅中的分布、氧化应力与氧化层厚度的关系、氧化应力随时间的变化等进行了研究.
In this paper, we use the infrared laser photoelasticity instrument to solve the quantitative measurement of the fractional fringe value of silicon wafer by using the Senarmont compensation method in the light-sensing elastic mechanics.On the basis of considering the anisotropy of the photo-elastic effect of the silicon crystal, , (100) the original stress and the oxidative stress of the monocrystalline silicon wafer.The generation and elimination of the initial stress of the silicon wafer, the distribution of the oxidation stress in the silicon, the relationship between the oxidation stress and the thickness of the oxide layer, the change of the oxidation stress with time Study.