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冷持存貯元件的主要组成部份是一个超导电感及与其並联的开关构件、后者正常时处於超导状态.但是电流超过某一临界值时它它变为电阻。当有一适当的电流脉冲送(?)冷持存貯器件时,存入冷持循环电流。与第一个脉冲方向相同的第二个脉冲不會使它发生变化但是反方向的脉冲使循环电流反向並在元件上产生电压。利用与两个(?)多个驱动线路的耦合互(?).这种存貯元件可构成与缺磁磁心矩阵一样的矩阵。用铅製的电感及锡膜。铟膜构成的冷持存貯元件已具有典型的存貯单元的功能。其脉冲宽度为15毫微秒,重复频率达15兆赫,速度还有可能(?)一步提高。极限速度由(?)膜开关元件厚度决定.祗要其他部分需要,它还可再高。这種元件很适於用紧凑的印制电路方法生产,其密度可达每立方呎100万位。
The main components of a cold-holding storage unit are a superconducting inductor and a switching element connected in parallel with the latter, which is normally superconducting, but it becomes resistive when the current exceeds a certain threshold. When there is a suitable current pulse sending (?) Cold holding storage device, the cold holding cycle current is stored. The second pulse in the same direction as the first pulse does not change it, but the opposite pulse reverses the circulating current and creates a voltage across the element. Utilizing a coupling (?) With two (?) Drive lines, this storage element can form the same matrix as the lack of magnetic core matrix. Lead inductance and tin film. An indium film has been constructed with the function of a typical memory cell. With a pulse width of 15 ns and a repetition rate of 15 MHz, it is still possible (?) To increase the speed. The limit speed is determined by the membrane switch element thickness, which can be as high as the rest of the unit requires. The device is well suited for compact printed circuit production and can be used at density of up to 1 million cubic feet per square foot.