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随着半导体技术的发展,芯片特征尺寸缩小到深亚微米和纳米时,铜互连技术在集成电路的设计和制造中成为主流技术,从而对高纯铜靶材的要求越来越高。从靶材制造的角度利用材料学的知识对铜靶材的晶体结构、纯度、致密度、微观组织及焊接性能等方面作了分析,并且较全面地分析了可能影响靶材溅射性能的很多关键因素,从而为靶材供应商和集成电路制造商对于铜靶材的了解搭建了桥梁,为进一步开发超大尺寸的高纯铜靶材打下基础。
With the development of semiconductor technology, when the chip feature size shrinks to deep sub-micron and nano-scale, the copper interconnection technology becomes the mainstream technology in the design and manufacture of integrated circuits, thereby increasing the demand for high-purity copper targets. From the perspective of target fabrication, the crystal structure, purity, compactness, microstructure and weldability of copper target were analyzed by using material science knowledge, and a lot of analyzes on the sputtering target properties Key factors to build a bridge for target suppliers and IC manufacturers to understand copper targets and lay the foundation for the further development of ultra-large-sized high-purity copper targets.