论文部分内容阅读
数值模拟表明,薄膜全耗尽(FD)SOI器件的电位和电场分布,与较厚的部分耗尽(PD)SOI器件中所观测到的大不相同;漏电场和源势垒的降低使扭曲效应大为减小。
Numerical simulations show that the potential and electric field distribution of a fully depleted (FD) SOI device is significantly different from that observed in thicker partially depleted (PD) SOI devices; the reduction of leakage and source barriers distorts The effect is greatly reduced.