一、引言Ga As 材料经过三十年的研究和应用,已在微波和光电器件领域占据重要地位。采用目前的Ga As 材料工艺,已经可以批量生产一些微波器件和光电器件。近几年来,Ga As 材料又进入一个新的发展时期。一系列的有关 Ga As 材料物理研究获得成功;新型的 Ca As 器件、微波单片集成电路、数字集成电路和光集成技术等层出不穷。这些发展对 Ga As材料工艺提出了新的要求,,促使材料工艺加速开发。 I. INTRODUCTION After 30 years of research and application, Ga As material occupies an important position in the field of microwave and optoelectronic devices. Using the current Ga As material process, it is possible to mass-produce some microwave and opto-electronic devices. In recent years, Ga As material has entered a new period of development. A series of successful Ga As materials physics studies have emerged; new CaAs devices, microwave monolithic integrated circuits, digital integrated circuits and integrated optical technologies are emerging. These developments have placed new demands on the GaAs material process, prompting the accelerated development of the material process.