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本文综述了中子对半导体双极性晶体管的影响。给出了中子辐照硅材料引入缺陷复合体的能级位置、俘获截面和缺陷浓度。并根据中子的辐照效应,提出在双极性晶体管中掺入金、铂杂质,降低辐照前的原始寿命,有助于提高抗中子能力。实验结果表明,掺入金、铂后,可以把器件的抗中子能力从φ_n=3.5×10~(13)n/cm~2提高到φ_n=6×10~(13)n/cm~2(提高了近一倍)。实验还表明,掺金或铂与表面钝化相结合,晶体管抗中子能力将会更强。
This article reviews the effects of neutrons on semiconductor bipolar transistors. The energy level position, capture cross section and defect concentration of the introduced neutron irradiated silicon material are given. According to the effect of neutron irradiation, it is proposed that the bipolar transistor incorporates the impurities of gold and platinum to reduce the original life before irradiation and help to improve the anti-neutron ability. The experimental results show that the anti-neutron capability of the device can be increased from φ_n = 3.5 × 10 ~ (13) n / cm ~ 2 to φ_n = 6 × 10 ~ (13) n / cm ~ 2 after gold and platinum are doped. (Nearly doubled). Experiments also show that the incorporation of gold or platinum with surface passivation, transistor anti-neutron ability will be stronger.