We demonstrate that the electroluminescent performances of organic light-emitting diodes(OLEDs)are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode.The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower tu-on voltage of 2.6 V,a higher brightness of39820cd/m2 at 13 V,and a higher current efficiency of 5.96cd/A at 6 V,which are obviously superior to those of the conventional device(tu-on voltage of 4.1 V,brightness of 18230cd/m2 at 13 V,and maximum current efficiency of 2.74 cd/A at 10 V).Furthermore,the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into/3-NPB as p-HTL(3.11 cd/A at 7 V).The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping,the measurement of absorption and photoluminescence spectra of the organic materials,and the current density-voltage characteristics of the corresponding hole-only devices.