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针对现有脉冲辐射模拟装置在模拟真实环境方面累积剂量偏小的特点,开展了54HC系列CMOS器件脉冲γ与60 Coγ总剂量效应损伤异同性研究,获取器件效应损伤因子,以期通过对稳态辐射环境下电路总剂量损伤阈值的测量预估脉冲高剂量率环境下的总剂量损伤阈值。研究结果表明,无论选择哪种敏感参数进行效应损伤异同性研究,稳态辐照造成的总剂量损伤总是高于脉冲辐照,即稳态总剂量引起的器件阈值电压漂移、静态功耗电流增加比脉冲总剂量引起的大。
Aiming at the small cumulative dose of the existing pulsed radiation simulation device in simulated real environment, the similarities and differences of the total dose effect damage of 54γ and 60 Coγ series CMOS devices were studied, and the device effect damage factor was obtained. Measurement of Total Dose Damage Threshold in Circuits Estimated the Total Dose Threshold Under Impulsive High Dose Rate. The results show that no matter which kind of sensitive parameters are selected, the total dose damage caused by steady-state radiation is always higher than that of pulsed radiation, ie, the threshold voltage drift caused by the steady-state total dose and the static power consumption current Increase than the total dose caused by pulse large.