论文部分内容阅读
提出了一个提高PDSOI nMOSFETs可靠性的方法,并且研究了这种器件的热载流子可靠性。这种方法是在制造器件中,进行背沟道注入时只注入背沟道一半的区域。应力试验结果表明这种新的器件和常规器件相比,展示了较低的热载流子退变。2D器件模拟表明在漏端降低的峰值电场有助于这种器件提高的热载流子可靠性。
A method to improve the reliability of PDSOI nMOSFETs is proposed, and the hot carrier reliability of the device is studied. This method is in the manufacture of devices, back-channel injection into the back channel only half the region. Stress test results show that this new device shows a lower hot carrier degeneration than conventional devices. 2D device simulations show that the decreased peak electric field at the drain helps contribute to the improved hot carrier reliability of this device.