器件尺寸的缩小和新材料的引入给清洗带来的挑战,在多个版本的I T R S(国际半导体技术蓝图)中都有概述。简单的说,清除污染物需要最小的材料损失并且不能修改对损伤很敏感的材料结构。这对于从无支撑多晶硅栅结构上去除可能导致良率下降的污染物来说更是如此。在寻找满足这些要 The reduced size of the device and the challenge of cleaning brought by the introduction of new materials are outlined in many versions of I R S (International Semiconductor Technology Roadmap). Simply put, removal of contaminants requires minimal material loss and can not modify material structures that are sensitive to damage. This is especially true of removing contaminants that can lead to yield degradation from unsupported polysilicon gate structures. Looking to meet these needs